TK65A10N1,S4X

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Element Configuration :

Single

Fall Time (Typ) :

26 ns

RoHS Status :

RoHS Compliant

Mount :

Through Hole

Package / Case :

TO-220-3 Full Pack

Case Connection :

Isolated

Operating Temperature :

150°C TJ

JEDEC-95 Code :

TO-220AB

Turn-Off Delay Time :

85 ns

Drain to Source Voltage (Vdss) :

100V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Rise Time :

19ns

Pulsed Drain Current-Max (IDM) :

296A

Mounting Type :

Through Hole

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

12 Weeks

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

65A Tc

Rds On (Max) @ Id, Vgs :

4.8m Ω @ 32.5A, 10V

Series :

U-MOSVIII-H

Continuous Drain Current (ID) :

65A

Number of Pins :

3

FET Type :

N-Channel

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

5400pF @ 50V

Vgs(th) (Max) @ Id :

4V @ 1mA

Drain-source On Resistance-Max :

0.0048Ohm

Operating Mode :

ENHANCEMENT MODE

Published :

2014

Packaging :

Tube

Gate to Source Voltage (Vgs) :

20V

Weight :

6.000006g

Turn On Delay Time :

44 ns

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

81nC @ 10V

Number of Channels :

1

Power Dissipation-Max :

45W Tc