TK56A12N1,S4X

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3 Full Pack

RoHS Status :

RoHS Compliant

Drain to Source Voltage (Vdss) :

120V

Input Capacitance :

4.2nF

Continuous Drain Current (ID) :

56A

Gate to Source Voltage (Vgs) :

20V

Supplier Device Package :

TO-220SIS

Weight :

6.000006g

Number of Pins :

3

Rise Time :

20ns

Element Configuration :

Single

Vgs (Max) :

±20V

Published :

2014

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 1mA

Max Operating Temperature :

150°C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Number of Channels :

1

Mounting Type :

Through Hole

Power Dissipation-Max :

45W Tc

FET Type :

N-Channel

Turn-Off Delay Time :

73 ns

Turn On Delay Time :

45 ns

Min Operating Temperature :

-55°C

Current - Continuous Drain (Id) @ 25°C :

56A Tc

Drain to Source Resistance :

6.2mOhm

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 60V

Gate Charge (Qg) (Max) @ Vgs :

69nC @ 10V

Packaging :

Tube

Mount :

Through Hole

Factory Lead Time :

12 Weeks

Fall Time (Typ) :

23 ns

Series :

U-MOSVIII-H

Operating Temperature :

150°C TJ

Rds On (Max) @ Id, Vgs :

7.5mOhm @ 28A, 10V

Rds On Max :

7.5 mΩ