TK56E12N1,S1X

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Mfr.Part #
TK56E12N1,S1X
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N CH 120V 56A TO-220
Stock
12,223
In Stock :
12,223

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Fall Time (Typ) :
23 ns
Current - Continuous Drain (Id) @ 25°C :
56A Ta
Gate to Source Voltage (Vgs) :
20V
Published :
2014
Vgs(th) (Max) @ Id :
4V @ 1mA
Series :
U-MOSVIII-H
Rise Time :
20ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Through Hole
Continuous Drain Current (ID) :
56A
Packaging :
Tube
RoHS Status :
RoHS Compliant
Power Dissipation-Max :
168W Tc
Power Dissipation :
168W
Mounting Type :
Through Hole
Vgs (Max) :
±20V
Element Configuration :
Single
Turn-Off Delay Time :
73 ns
Package / Case :
TO-220-3
Operating Temperature :
150°C TJ
FET Type :
N-Channel
Drain to Source Breakdown Voltage :
120V
Rds On (Max) @ Id, Vgs :
7m Ω @ 28A, 10V
Factory Lead Time :
12 Weeks
Gate Charge (Qg) (Max) @ Vgs :
69nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
4200pF @ 60V
Datasheets
TK56E12N1,S1X
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK56E12N1,S1X from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3, Operating Temperature:150°C TJ, TK56E12N1,S1X pinout, TK56E12N1,S1X datasheet PDF, TK56E12N1,S1X amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK56E12N1,S1X ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation TK56E12N1,S1X


N-Channel Tube 7m Ω @ 28A, 10V ±20V 4200pF @ 60V 69nC @ 10V TO-220-3

TK56E12N1,S1X Overview


A device's maximum input capacitance is 4200pF @ 60V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 56A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=120V, and this device has a drain-to-source breakdown voltage of 120V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 73 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.

TK56E12N1,S1X Features


a continuous drain current (ID) of 56A
a drain-to-source breakdown voltage of 120V voltage
the turn-off delay time is 73 ns


TK56E12N1,S1X Applications


There are a lot of Toshiba Semiconductor and Storage
TK56E12N1,S1X applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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