TK4P60DB(T6RSS-Q)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

150°C TJ

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Radiation Hardening :

No

Factory Lead Time :

12 Weeks

FET Type :

N-Channel

Continuous Drain Current (ID) :

3.7A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

4.4V @ 1mA

Drain to Source Voltage (Vdss) :

600V

Vgs (Max) :

±30V

Mounting Type :

Surface Mount

RoHS Status :

RoHS Compliant

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

80W

Rds On (Max) @ Id, Vgs :

2 Ω @ 1.9A, 10V

Published :

2010

Input Capacitance (Ciss) (Max) @ Vds :

540pF @ 25V

Series :

π-MOSVII

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

3.7A Ta

Power Dissipation-Max :

80W Tc

Number of Elements :

1

Fall Time (Typ) :

8 ns

Rise Time :

18ns