TK4P50D(T6RSS-Q)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

30V

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

2 Ω @ 2A, 10V

Fall Time (Typ) :

7 ns

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

500V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Rise Time :

15ns

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

380pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 10V

Power Dissipation :

80W

RoHS Status :

RoHS Compliant

Power Dissipation-Max :

80W Tc

Current - Continuous Drain (Id) @ 25°C :

4A Ta

Factory Lead Time :

12 Weeks

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

Series :

π-MOSVII

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Published :

2010

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

150°C TJ

Vgs (Max) :

±30V

Continuous Drain Current (ID) :

4A

Vgs(th) (Max) @ Id :

4.4V @ 1mA