TK4P60DA(T6RSS-Q)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

30V

Published :

2012

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Vgs(th) (Max) @ Id :

4.4V @ 1mA

Power Dissipation-Max :

80W Tc

Rds On (Max) @ Id, Vgs :

2.2 Ω @ 1.8A, 10V

Rise Time :

18ns

Factory Lead Time :

16 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

8 ns

Radiation Hardening :

No

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

3.5A Ta

Continuous Drain Current (ID) :

3.5A

Series :

π-MOSVII

RoHS Status :

RoHS Compliant

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

600V

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Number of Elements :

1

FET Type :

N-Channel

Power Dissipation :

80W

Input Capacitance (Ciss) (Max) @ Vds :

490pF @ 25V

Operating Temperature :

150°C TJ

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount