TK4P55D(T6RSS-Q)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

80W Tc

Rds On Max :

1.88 Ω

Gate to Source Voltage (Vgs) :

30V

Rds On (Max) @ Id, Vgs :

1.88Ohm @ 2A, 10V

Series :

π-MOSVII

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-55°C

Drain to Source Voltage (Vdss) :

550V

Input Capacitance (Ciss) (Max) @ Vds :

490pF @ 25V

Radiation Hardening :

No

Published :

2010

Vgs(th) (Max) @ Id :

4.4V @ 1mA

RoHS Status :

RoHS Compliant

Max Operating Temperature :

150°C

Vgs (Max) :

±30V

FET Type :

N-Channel

Operating Temperature :

150°C TJ

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

8 ns

Continuous Drain Current (ID) :

4A

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

4A Ta

Supplier Device Package :

D-Pak

Factory Lead Time :

12 Weeks

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

18ns

Mounting Type :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mount :

Surface Mount

Input Capacitance :

490pF