TK25E60X5,S1X

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Mfr.Part #
TK25E60X5,S1X
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 600V 25A TO220
Stock
6,228
In Stock :
6,228

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Published :
2015
Power Dissipation-Max :
180W Tc
Gate Charge (Qg) (Max) @ Vgs :
60nC @ 10V
Rds On (Max) @ Id, Vgs :
140m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 1.2mA
RoHS Status :
RoHS Compliant
Series :
DTMOSIV-H
FET Type :
N-Channel
Package / Case :
TO-220-3
Vgs (Max) :
±30V
Current - Continuous Drain (Id) @ 25°C :
25A Ta
Packaging :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Type :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
150°C TJ
Mount :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
2400pF @ 300V
Continuous Drain Current (ID) :
25A
Factory Lead Time :
16 Weeks
Drain to Source Voltage (Vdss) :
600V
Datasheets
TK25E60X5,S1X
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK25E60X5,S1X from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Mounting Type:Through Hole, Operating Temperature:150°C TJ, TK25E60X5,S1X pinout, TK25E60X5,S1X datasheet PDF, TK25E60X5,S1X amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK25E60X5,S1X ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation TK25E60X5,S1X


N-Channel Tube 140m Ω @ 7.5A, 10V ±30V 2400pF @ 300V 60nC @ 10V 600V TO-220-3

TK25E60X5,S1X Overview


The maximum input capacitance of this device is 2400pF @ 300V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 25A.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

TK25E60X5,S1X Features


a continuous drain current (ID) of 25A
a 600V drain to source voltage (Vdss)


TK25E60X5,S1X Applications


There are a lot of Toshiba Semiconductor and Storage
TK25E60X5,S1X applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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