TK25E06K3,S1X(S

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Mfr.Part #
TK25E06K3,S1X(S
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 60V 25A TO220-3
Stock
1
In Stock :
1

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Factory Lead Time :
12 Weeks
Rds On Max :
18 mΩ
RoHS Status :
RoHS Compliant
Package / Case :
TO-220-3
Power Dissipation :
60W
Published :
2009
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
60W Tc
Supplier Device Package :
TO-220-3
Continuous Drain Current (ID) :
25A
Drain to Source Resistance :
14Ohm
FET Type :
N-Channel
Mount :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
25A Ta
Drain to Source Breakdown Voltage :
60V
Drain to Source Voltage (Vdss) :
60V
Series :
U-MOSIV
Rds On (Max) @ Id, Vgs :
18mOhm @ 12.5A, 10V
Packaging :
Tube
Operating Temperature :
150°C TJ
Mounting Type :
Through Hole
Gate Charge (Qg) (Max) @ Vgs :
29nC @ 10V
Datasheets
TK25E06K3,S1X(S
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK25E06K3,S1X(S from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Operating Temperature:150°C TJ, Mounting Type:Through Hole, TK25E06K3,S1X(S pinout, TK25E06K3,S1X(S datasheet PDF, TK25E06K3,S1X(S amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK25E06K3,S1X(S ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation TK25E06K3,S1X(S


N-Channel Tube 18mOhm @ 12.5A, 10V 29nC @ 10V 60V TO-220-3

TK25E06K3,S1X(S Overview


This device has a continuous drain current (ID) of [25A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.MOSFETs have 14Ohm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).

TK25E06K3,S1X(S Features


a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 60V voltage
single MOSFETs transistor is 14Ohm
a 60V drain to source voltage (Vdss)


TK25E06K3,S1X(S Applications


There are a lot of Toshiba Semiconductor and Storage
TK25E06K3,S1X(S applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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