TK25S06N1L,LXHQ

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Manufacturer :

Toshiba

Rise Time :

8 ns

Gate Charge (Qg) (Max) @ Vgs :

15 nC @ 10 V

Vgs(th) (Max) @ Id :

2.5V @ 100μA

RoHS :

Details

Packaging :

Cut Tape

Brand :

Toshiba

Package :

Digi-Reel?

Product Status :

Active

Current - Continuous Drain (Id) @ 25°C :

25A (Ta)

Power Dissipation (Max) :

57W (Tc)

Rds On (Max) @ Id, Vgs :

36.8mOhm @ 12.5A, 4.5V

Tradename :

U-MOSVIII-H

Transistor Type :

1 N-Channel

Mounting Style :

SMD/SMT

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

855 pF @ 10 V

FET Type :

N-Channel

Mounting Type :

Surface Mount

Transistor Polarity :

N-Channel

Maximum Operating Temperature :

+ 175 C

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

FET Feature :

-

Subcategory :

MOSFETs

Number of Channels :

1 Channel

Product Category :

MOSFET

Supplier Device Package :

DPAK+

Channel Mode :

Enhancement

Minimum Operating Temperature :

- 55 C

Drain to Source Voltage (Vdss) :

60 V

Base Product Number :

TK25S06

Operating Temperature :

175°C

Qualification :

AEC-Q101

Product Type :

MOSFET

Series :

U-MOSVIII-H

Configuration :

Single