TK15S04N1L,LQ

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

RoHS Compliant

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Element Configuration :

Single

Published :

2015

Number of Elements :

1

Drain-source On Resistance-Max :

0.037Ohm

Fall Time (Typ) :

6 ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Weight :

3.949996g

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

23 mJ

Input Capacitance (Ciss) (Max) @ Vds :

610pF @ 10V

Continuous Drain Current (ID) :

15A

Pulsed Drain Current-Max (IDM) :

30A

Number of Channels :

1

Current - Continuous Drain (Id) @ 25°C :

15A Ta

Turn On Delay Time :

14 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

40V

Case Connection :

DRAIN

Operating Temperature :

175°C TJ

Rise Time :

6ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Factory Lead Time :

12 Weeks

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Rds On (Max) @ Id, Vgs :

17.8m Ω @ 7.5A, 10V

Gate to Source Voltage (Vgs) :

20V

Packaging :

Cut Tape (CT)

Power Dissipation-Max :

46W Tc

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Application :

SWITCHING

Reach Compliance Code :

Unknown

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

2.5V @ 100μA

Series :

U-MOSVIII-H

Turn-Off Delay Time :

28 ns

Mount :

Surface Mount

FET Type :

N-Channel