TK15A50D(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On Max :

300 mΩ

Gate to Source Voltage (Vgs) :

30V

Drain to Source Voltage (Vdss) :

500V

Factory Lead Time :

16 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

15A Ta

Vgs(th) (Max) @ Id :

4V @ 1mA

Packaging :

Tube

Power Dissipation :

50W

Max Operating Temperature :

150°C

Input Capacitance :

2.3nF

Published :

2009

Operating Temperature :

150°C TJ

Min Operating Temperature :

-55°C

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Rise Time :

50ns

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

300mOhm @ 7.5A, 10V

Fall Time (Typ) :

25 ns

Package / Case :

TO-220-3 Full Pack

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Number of Pins :

3

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

2300pF @ 25V

Mount :

Through Hole

Series :

π-MOSVII

Radiation Hardening :

No

Supplier Device Package :

TO-220SIS

Power Dissipation-Max :

50W Tc

Continuous Drain Current (ID) :

15A

Drive Voltage (Max Rds On,Min Rds On) :

10V