TK15A50D(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Number of Pins :

3

Max Operating Temperature :

150°C

Operating Temperature :

150°C TJ

Vgs(th) (Max) @ Id :

4V @ 1mA

Package / Case :

TO-220-3 Full Pack

Rds On (Max) @ Id, Vgs :

300mOhm @ 7.5A, 10V

Rds On Max :

300 mΩ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

16 Weeks

Mount :

Through Hole

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Power Dissipation-Max :

50W Tc

Continuous Drain Current (ID) :

15A

Rise Time :

50ns

FET Type :

N-Channel

Published :

2009

Input Capacitance :

2.3nF

Power Dissipation :

50W

Min Operating Temperature :

-55°C

Drain to Source Voltage (Vdss) :

500V

Input Capacitance (Ciss) (Max) @ Vds :

2300pF @ 25V

Vgs (Max) :

±30V

Fall Time (Typ) :

25 ns

Supplier Device Package :

TO-220SIS

Number of Elements :

1

RoHS Status :

RoHS Compliant

Gate to Source Voltage (Vgs) :

30V

Current - Continuous Drain (Id) @ 25°C :

15A Ta

Radiation Hardening :

No

Series :

π-MOSVII

Drive Voltage (Max Rds On,Min Rds On) :

10V