TK15A60U(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

40W Tc

Supplier Device Package :

TO-220SIS

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Published :

2009

Rise Time :

37ns

Factory Lead Time :

12 Weeks

FET Type :

N-Channel

Number of Elements :

1

Fall Time (Typ) :

8 ns

Radiation Hardening :

No

Operating Temperature :

150°C TJ

Rds On (Max) @ Id, Vgs :

300mOhm @ 7.5A, 10V

Max Operating Temperature :

150°C

Package / Case :

TO-220-3 Full Pack

Number of Pins :

3

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

950pF @ 10V

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

15A Ta

Min Operating Temperature :

-55°C

Mount :

Through Hole

Continuous Drain Current (ID) :

15A

Rds On Max :

300 mΩ

Drain to Source Voltage (Vdss) :

600V

Gate to Source Voltage (Vgs) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

DTMOSII

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

5V @ 1mA

Vgs (Max) :

±30V

Input Capacitance :

950pF

Power Dissipation :

40W

RoHS Status :

RoHS Compliant