TK15A60D(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

50W Tc

Vgs(th) (Max) @ Id :

4V @ 1mA

Fall Time (Typ) :

25 ns

Gate to Source Voltage (Vgs) :

30V

Drain to Source Breakdown Voltage :

600V

Element Configuration :

Single

Package / Case :

TO-220-3 Full Pack

Mount :

Through Hole

Published :

2009

Vgs (Max) :

±30V

Mounting Type :

Through Hole

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

370m Ω @ 7.5A, 10V

RoHS Status :

RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Operating Temperature :

150°C TJ

Current - Continuous Drain (Id) @ 25°C :

15A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

15A

Input Capacitance (Ciss) (Max) @ Vds :

2600pF @ 25V

Rise Time :

50ns

FET Type :

N-Channel

Factory Lead Time :

16 Weeks

Series :

π-MOSVII

Packaging :

Tube

Power Dissipation :

50W