SUM65N20-30-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Reverse Recovery Time :

130 ns

Width :

9.65mm

Element Configuration :

Single

Power Dissipation :

3.75W

Current - Continuous Drain (Id) @ 25°C :

65A Tc

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Weight :

1.437803g

Turn On Delay Time :

24 ns

Pbfree Code :

yes

Continuous Drain Current (ID) :

65A

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

200 ns

Radiation Hardening :

No

Turn-Off Delay Time :

45 ns

Resistance :

30mOhm

Lead Free :

Lead Free

Number of Terminations :

2

Max Junction Temperature (Tj) :

175°C

Length :

10.41mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Breakdown Voltage :

200V

Input Capacitance (Ciss) (Max) @ Vds :

5100pF @ 25V

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Series :

TrenchFET®

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation-Max :

3.75W Ta 375W Tc

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

2V

Number of Channels :

1

Nominal Vgs :

4 V

Terminal Form :

Gull wing

Termination :

SMD/SMT

Mount :

Surface Mount

Height :

5.08mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

14 Weeks

Rise Time :

220ns

Pin Count :

4

Published :

2011

Vgs (Max) :

±20V

Dual Supply Voltage :

200V

Rds On (Max) @ Id, Vgs :

30m Ω @ 30A, 10V

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Transistor Application :

SWITCHING

Contact Plating :

Tin

ECCN Code :

EAR99

Number of Pins :

3