SUM60N10-17-E3
- Mfr.Part #
- SUM60N10-17-E3
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 60A TO263
- Stock
- 18,798
- In Stock :
- 18,798
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- 100V
- Number of Elements :
- 1
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Turn On Delay Time :
- 15 ns
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 2
- Terminal Form :
- Gull wing
- Weight :
- 1.437803g
- Continuous Drain Current (ID) :
- 60A
- Gate to Source Voltage (Vgs) :
- 20V
- Avalanche Energy Rating (Eas) :
- 80 mJ
- Case Connection :
- DRAIN
- JESD-30 Code :
- R-PSSO-G2
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Width :
- 9.65mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 10.41mm
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- JESD-609 Code :
- e3
- Published :
- 2015
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Height :
- 4.83mm
- Operating Temperature :
- -55°C~175°C TJ
- Number of Channels :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 4300pF @ 25V
- Fall Time (Typ) :
- 10 ns
- Rise Time :
- 12ns
- Factory Lead Time :
- 14 Weeks
- Turn Off Time-Max (toff) :
- 60ns
- Resistance :
- 16.5mOhm
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Series :
- TrenchFET®
- Pin Count :
- 4
- Pbfree Code :
- yes
- Contact Plating :
- Tin
- Power Dissipation :
- 3.75W
- Turn-Off Delay Time :
- 30 ns
- Rds On (Max) @ Id, Vgs :
- 16.5m Ω @ 30A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 100nC @ 10V
- Power Dissipation-Max :
- 3.75W Ta 150W Tc
- Number of Pins :
- 3
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheets
- SUM60N10-17-E3
N-Channel Tape & Reel (TR) 16.5m Ω @ 30A, 10V ±20V 4300pF @ 25V 100nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SUM60N10-17-E3 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 80 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4300pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 60A amps.In this device, the drain-source breakdown voltage is 100V and VGS=100V, so the drain-source breakdown voltage is 100V in this case.It is [30 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 15 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (6V 10V).
SUM60N10-17-E3 Features
the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 30 ns
SUM60N10-17-E3 Applications
There are a lot of Vishay Siliconix
SUM60N10-17-E3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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