SUM60N02-3M9P-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

3.9m Ω @ 20A, 10V

Weight :

1.437803g

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Vgs(th) (Max) @ Id :

3V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Radiation Hardening :

No

Case Connection :

DRAIN

Fall Time (Typ) :

8 ns

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

3.75W Ta 120W Tc

Gate to Source Voltage (Vgs) :

20V

Length :

10.41mm

Turn On Delay Time :

15 ns

Element Configuration :

Single

Power Dissipation :

3.75W

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

5950pF @ 10V

Mounting Type :

Surface Mount

Pin Count :

3

Rise Time :

7ns

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 4.5V

Continuous Drain Current (ID) :

60A

JESD-609 Code :

e3

FET Type :

N-Channel

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

Height :

4.83mm

Resistance :

3.9MOhm

Published :

2013

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

Width :

9.65mm

Number of Terminations :

2

Terminal Form :

Gull wing

Turn-Off Delay Time :

35 ns

Series :

TrenchFET®