SUM60030E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Power Dissipation-Max :

375W Tc

Mount :

Surface Mount

Number of Elements :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs :

141nC @ 10V

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

7.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

7910pF @ 40V

Drain-source On Resistance-Max :

0.0032Ohm

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

245 mJ

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

4V @ 250µA

DS Breakdown Voltage-Min :

80V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

250A

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

80V

JESD-609 Code :

e3

Published :

2016

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 30A, 10V

Series :

TrenchFET®

Factory Lead Time :

14 Weeks

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

120A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)