SUD45P04-16P-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

40V

Rise Time :

20ns

Vgs (Max) :

±20V

Element Configuration :

Single

Factory Lead Time :

13 Weeks

Mount :

Surface Mount

Lead Free :

Lead Free

Case Connection :

DRAIN

Published :

2017

Mounting Type :

Surface Mount

Fall Time (Typ) :

20 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

2765pF @ 20V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

16.2m Ω @ 14A, 20V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Number of Channels :

1

Pin Count :

4

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

10 ns

DS Breakdown Voltage-Min :

40V

Radiation Hardening :

No

Turn-Off Delay Time :

42 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Continuous Drain Current (ID) :

36A

Series :

TrenchFET®

Current - Continuous Drain (Id) @ 25°C :

36A Tc

Power Dissipation-Max :

2.1W Ta 41.7W Tc

Power Dissipation :

2.1W

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

FET Type :

P-Channel

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-PSSO-G2