SUD40N08-16-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1960pF @ 25V

Series :

TrenchFET®

Continuous Drain Current (ID) :

40A

Threshold Voltage :

2V

Radiation Hardening :

No

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Dual Supply Voltage :

80V

Number of Channels :

1

JESD-30 Code :

R-PSSO-G2

Contact Plating :

Tin

Rise Time :

52ns

Rds On (Max) @ Id, Vgs :

16m Ω @ 40A, 10V

Pulsed Drain Current-Max (IDM) :

60A

JESD-609 Code :

e3

Number of Terminations :

2

Resistance :

16mOhm

Time@Peak Reflow Temperature-Max (s) :

20

Nominal Vgs :

4 V

Weight :

1.437803g

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

14 Weeks

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

10 ns

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

25 ns

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

80V

Pin Count :

4

Turn On Delay Time :

12 ns

Terminal Form :

Gull wing

Published :

2009

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Length :

6.73mm

Width :

6.22mm

Power Dissipation :

3W

Mount :

Surface Mount

Power Dissipation-Max :

3W Ta 136W Tc

Element Configuration :

Single

Termination :

SMD/SMT

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

ECCN Code :

EAR99

Height :

2.39mm

Lead Free :

Lead Free

REACH SVHC :

Unknown

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA