SUD40N02-3M3P-E3
- Mfr.Part #
- SUD40N02-3M3P-E3
- Manufacturer
- Vishay
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 24.4A/40A TO252
- Stock
- 39,692
- In Stock :
- 39,692
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Gull wing
- JESD-30 Code :
- R-PSSO-G2
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation :
- 3.3W
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 24.4A
- Resistance :
- 3.3MOhm
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 3.3W Ta 79W Tc
- Turn On Delay Time :
- 40 ns
- Current - Continuous Drain (Id) @ 25°C :
- 24.4A Ta 40A Tc
- Published :
- 2016
- Drain Current-Max (Abs) (ID) :
- 40A
- Input Capacitance (Ciss) (Max) @ Vds :
- 6520pF @ 10V
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Number of Elements :
- 1
- Pin Count :
- 4
- Series :
- TrenchFET®
- Gate Charge (Qg) (Max) @ Vgs :
- 160nC @ 10V
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 67 ns
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 100A
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 2
- Fall Time (Typ) :
- 33 ns
- Drain to Source Breakdown Voltage :
- 20V
- ECCN Code :
- EAR99
- Rise Time :
- 30ns
- Operating Temperature :
- -55°C~175°C TJ
- Rds On (Max) @ Id, Vgs :
- 3.3m Ω @ 20A, 10V
- Mount :
- Surface Mount
- Datasheets
- SUD40N02-3M3P-E3
N-Channel Tape & Reel (TR) 3.3m Ω @ 20A, 10V ±20V 6520pF @ 10V 160nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
SUD40N02-3M3P-E3 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 6520pF @ 10V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 24.4A.With a drain-source breakdown voltage of 20V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 20V.40A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 67 ns.Peak drain current for this device is 100A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 40 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
SUD40N02-3M3P-E3 Features
a continuous drain current (ID) of 24.4A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 67 ns
based on its rated peak drain current 100A.
SUD40N02-3M3P-E3 Applications
There are a lot of Vishay Siliconix
SUD40N02-3M3P-E3 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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