SUD40N02-08-E3
- Mfr.Part #
- SUD40N02-08-E3
- Manufacturer
- Vishay
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 40A TO252
- Stock
- 26,368
- In Stock :
- 26,368
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 40A
- Series :
- TrenchFET®
- Drain-source On Resistance-Max :
- 0.0085Ohm
- Length :
- 6.7056mm
- Dual Supply Voltage :
- 20V
- Number of Terminations :
- 2
- Gate to Source Voltage (Vgs) :
- 12V
- Rds On (Max) @ Id, Vgs :
- 8.5m Ω @ 20A, 4.5V
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Nominal Vgs :
- 600 mV
- Turn-Off Delay Time :
- 45 ns
- Width :
- 6.223mm
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 4.5V
- Threshold Voltage :
- 600mV
- Fall Time (Typ) :
- 20 ns
- Case Connection :
- DRAIN
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Input Capacitance (Ciss) (Max) @ Vds :
- 2660pF @ 20V
- Pin Count :
- 4
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Power Dissipation-Max :
- 8.3W Ta 71W Tc
- Number of Pins :
- 3
- Drain to Source Breakdown Voltage :
- 20V
- Vgs(th) (Max) @ Id :
- 600mV @ 250μA (Min)
- Radiation Hardening :
- No
- JESD-30 Code :
- R-PSSO-G2
- Power Dissipation :
- 71W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±12V
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Height :
- 2.3876mm
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Turn On Delay Time :
- 20 ns
- Operating Temperature :
- -55°C~175°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- REACH SVHC :
- No SVHC
- Published :
- 2008
- Rise Time :
- 120ns
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Datasheets
- SUD40N02-08-E3
N-Channel Tape & Reel (TR) 8.5m Ω @ 20A, 4.5V ±12V 2660pF @ 20V 35nC @ 4.5V TO-252-3, DPak (2 Leads + Tab), SC-63
SUD40N02-08-E3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2660pF @ 20V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 40A amps.In this device, the drain-source breakdown voltage is 20V and VGS=20V, so the drain-source breakdown voltage is 20V in this case.It is [45 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 20 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 600mV.A device like this reduces its overall power consumption when it uses drive voltage (2.5V 4.5V).
SUD40N02-08-E3 Features
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 45 ns
a threshold voltage of 600mV
SUD40N02-08-E3 Applications
There are a lot of Vishay Siliconix
SUD40N02-08-E3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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