STW8NK80Z

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Height :

20.15mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

30ns

Base Part Number :

STW8N

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

1320pF @ 25V

Voltage - Rated DC :

800V

Threshold Voltage :

3.75V

Mount :

Through Hole

Continuous Drain Current (ID) :

6.2A

Width :

5.15mm

Turn-Off Delay Time :

48 ns

Pin Count :

3

Turn On Delay Time :

17 ns

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 3.1A, 10V

Factory Lead Time :

12 Weeks

Packaging :

Tube

Package / Case :

TO-247-3

Fall Time (Typ) :

28 ns

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

800V

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

REACH SVHC :

No SVHC

Power Dissipation-Max :

140W Tc

Series :

SuperMESH™

Number of Pins :

3

Pulsed Drain Current-Max (IDM) :

24.8A

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Element Configuration :

Single

Current Rating :

6.2A

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Current - Continuous Drain (Id) @ 25°C :

6.2A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Power Dissipation :

140W

Gate to Source Voltage (Vgs) :

30V

Length :

15.75mm

Transistor Element Material :

SILICON

Contact Plating :

Tin