STW80NF06
- Mfr.Part #
- STW80NF06
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 80A TO247-3
- Stock
- 42,115
- In Stock :
- 42,115
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 300W Tc
- Fall Time (Typ) :
- 25 ns
- Voltage :
- 60V
- Mount :
- Through Hole
- RoHS Status :
- Non-RoHS Compliant
- Rds On (Max) @ Id, Vgs :
- 8m Ω @ 40A, 10V
- Operating Temperature :
- 175°C TJ
- Current Rating :
- 80A
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Base Part Number :
- STW80N
- Vgs (Max) :
- ±20V
- Series :
- STripFET™ II
- Turn-Off Delay Time :
- 70 ns
- Avalanche Energy Rating (Eas) :
- 870 mJ
- Drain-source On Resistance-Max :
- 0.008Ohm
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Single
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 3850pF @ 25V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Voltage - Rated DC :
- 60V
- ECCN Code :
- EAR99
- Additional Feature :
- LOW THRESHOLD
- Continuous Drain Current (ID) :
- 80A
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- Turn On Delay Time :
- 25 ns
- Pin Count :
- 3
- Lead Free :
- Contains Lead
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- JEDEC-95 Code :
- TO-247AA
- Gate to Source Voltage (Vgs) :
- 20V
- Peak Reflow Temperature (Cel) :
- 245
- Number of Elements :
- 1
- Current :
- 80A
- Rise Time :
- 85ns
- Package / Case :
- TO-247-3
- JESD-30 Code :
- R-PSFM-T3
- Number of Terminations :
- 3
- Datasheets
- STW80NF06

N-Channel Tube 8m Ω @ 40A, 10V ±20V 3850pF @ 25V 150nC @ 10V TO-247-3
STW80NF06 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 870 mJ.The maximum input capacitance of this device is 3850pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 80A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 70 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 25 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
STW80NF06 Features
the avalanche energy rating (Eas) is 870 mJ
a continuous drain current (ID) of 80A
the turn-off delay time is 70 ns
STW80NF06 Applications
There are a lot of STMicroelectronics
STW80NF06 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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