STW80NE06-10

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Package / Case :

TO-247-3

Rise Time :

150ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Tin/Lead (Sn/Pb)

Base Part Number :

STW80N

Rds On (Max) @ Id, Vgs :

10m Ω @ 40A, 10V

Packaging :

Tube

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

320A

JESD-609 Code :

e0

Current Rating :

80A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.01Ohm

ECCN Code :

EAR99

Power Dissipation-Max :

250W Tc

JESD-30 Code :

R-PSFM-T3

Drain to Source Breakdown Voltage :

60V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Fall Time (Typ) :

75 ns

Gate Charge (Qg) (Max) @ Vgs :

189nC @ 10V

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Through Hole

Power Dissipation :

250W

RoHS Status :

Non-RoHS Compliant

Avalanche Energy Rating (Eas) :

350 mJ

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

80A

Series :

STripFET™

Lead Free :

Contains Lead

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Transistor Element Material :

SILICON

Element Configuration :

Single

Transistor Application :

SWITCHING

Voltage - Rated DC :

60V

Input Capacitance (Ciss) (Max) @ Vds :

7600pF @ 25V

Reach Compliance Code :

not_compliant

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Operating Temperature :

175°C TJ