STW80NF55-08

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

300W Tc

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

320A

Package / Case :

TO-247-3

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

8m Ω @ 40A, 10V

Element Configuration :

Single

Turn On Delay Time :

20 ns

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Drain to Source Breakdown Voltage :

55V

Terminal Finish :

Tin (Sn)

Mount :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

3850pF @ 25V

Radiation Hardening :

No

Rise Time :

110ns

Turn-Off Delay Time :

75 ns

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

80A

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Transistor Element Material :

SILICON

Series :

STripFET™

Mounting Type :

Through Hole

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Base Part Number :

STW80N

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Fall Time (Typ) :

35 ns

JESD-30 Code :

R-PSFM-T3

Packaging :

Tube

Drain-source On Resistance-Max :

0.008Ohm

Power Dissipation :

300W