STW8NB100

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

30V

Vgs (Max) :

±30V

ECCN Code :

EAR99

Power Dissipation-Max :

190W Tc

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

700 mJ

Pin Count :

3

Drain Current-Max (Abs) (ID) :

8A

Pulsed Drain Current-Max (IDM) :

29.2A

Operating Temperature :

150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Contains Lead

FET Type :

N-Channel

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

1.45 Ω @ 3.6A, 10V

Power Dissipation :

190W

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

Drain to Source Voltage (Vdss) :

1000V

Current - Continuous Drain (Id) @ 25°C :

7.3A Tc

Terminal Finish :

Matte Tin (Sn)

Packaging :

Tube

RoHS Status :

Non-RoHS Compliant

Number of Elements :

1

JEDEC-95 Code :

TO-247AC

Voltage - Rated DC :

1kV

Input Capacitance (Ciss) (Max) @ Vds :

2900pF @ 25V

Drain to Source Breakdown Voltage :

1kV

JESD-30 Code :

R-PSFM-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Application :

SWITCHING

Fall Time (Typ) :

32 ns

Mount :

Through Hole

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

PowerMESH™

Continuous Drain Current (ID) :

7.3A

Mounting Type :

Through Hole

Rise Time :

13ns

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Base Part Number :

STW8N

Current Rating :

7.3A

Package / Case :

TO-247-3