STW88N65M5
- Mfr.Part #
- STW88N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 84A TO247-3
- Stock
- 8,782
- In Stock :
- 8,782
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 204nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Width :
- 5.15mm
- REACH SVHC :
- No SVHC
- Power Dissipation-Max :
- 450W Tc
- Rds On (Max) @ Id, Vgs :
- 29m Ω @ 42A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 84A Tc
- Turn-Off Delay Time :
- 141 ns
- Case Connection :
- DRAIN
- Power Dissipation :
- 450W
- Base Part Number :
- STW88N
- Threshold Voltage :
- 4V
- Length :
- 15.75mm
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-247-3
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Contact Plating :
- Tin
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Height :
- 24.45mm
- Series :
- MDmesh™ V
- Max Junction Temperature (Tj) :
- 150°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 8825pF @ 100V
- Turn On Delay Time :
- 141 ns
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Resistance :
- 24mOhm
- Number of Elements :
- 1
- Nominal Vgs :
- 4 V
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Factory Lead Time :
- 17 Weeks
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 84A
- Packaging :
- Tube
- Drain to Source Breakdown Voltage :
- 650V
- Gate to Source Voltage (Vgs) :
- 25V
- Number of Channels :
- 1
- Number of Terminations :
- 3
- Vgs (Max) :
- ±25V
- Element Configuration :
- Single
- Datasheets
- STW88N65M5

N-Channel Tube 29m Ω @ 42A, 10V ±25V 8825pF @ 100V 204nC @ 10V TO-247-3
STW88N65M5 Description
STW88N65M5 devices are N-channel MDmeshTM V Power MOSFETs that combine STMicroelectronics' well-known PowerMESHTM horizontal layout structure with an innovative proprietary vertical manufacturing technology. The resulting product has an extraordinarily low onresistance, which is unrivaled among silicon-based Power MOSFETs, making it ideal for applications requiring high power density and efficiency.
STW88N65M5 Features
? RDS(on) in TO-247 is the best in the world.
? A higher VDSS score
? Improved dv/dt performance
? Excellent switching capability
? Simple to operate
? Avalanche-proofed to the nth degree
STW88N65M5 Applications
Switching applications with high efficiency:
Servers
Inverters for solar panels
telecommunications infrastructure
Chargers for several kW batteries
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