STU9N65M2
- Mfr.Part #
- STU9N65M2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 5A IPAK
- Stock
- 1,697
- In Stock :
- 1,697
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 18 ns
- Factory Lead Time :
- 26 Weeks
- Mount :
- Through Hole
- Number of Channels :
- 1
- Turn On Delay Time :
- 7.5 ns
- Rds On (Max) @ Id, Vgs :
- 900m Ω @ 2.5A, 10V
- Drain to Source Voltage (Vdss) :
- 650V
- Base Part Number :
- STU9N
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 25V
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 5A
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 10V
- Threshold Voltage :
- 3V
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 315pF @ 100V
- Vgs (Max) :
- ±25V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 60W Tc
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Resistance :
- 790mOhm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 6.6ns
- Operating Temperature :
- 150°C TJ
- Series :
- MDmesh™
- REACH SVHC :
- No SVHC
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 22.5 ns
- Weight :
- 3.949996g
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- STU9N65M2

N-Channel Tube 900m Ω @ 2.5A, 10V ±25V 315pF @ 100V 10nC @ 10V 650V TO-251-3 Short Leads, IPak, TO-251AA
STU9N65M2 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 315pF @ 100V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 5A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 22.5 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7.5 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.3V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 650V.Using drive voltage (10V) reduces this device's overall power consumption.
STU9N65M2 Features
a continuous drain current (ID) of 5A
the turn-off delay time is 22.5 ns
a threshold voltage of 3V
a 650V drain to source voltage (Vdss)
STU9N65M2 Applications
There are a lot of STMicroelectronics
STU9N65M2 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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