STU90N4F3
- Mfr.Part #
- STU90N4F3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 80A IPAK
- Stock
- 33,066
- In Stock :
- 33,066
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Power Dissipation-Max :
- 110W Tc
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 6.5m Ω @ 40A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Base Part Number :
- STU90
- Number of Terminations :
- 3
- Lifecycle Status :
- NRND (Last Updated: 8 months ago)
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 60ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 400 mJ
- Vgs (Max) :
- ±20V
- Pin Count :
- 3
- Series :
- STripFET™ III
- Mount :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 15 ns
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 2200pF @ 25V
- Power Dissipation :
- 110W
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 80A
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Drain-source On Resistance-Max :
- 0.0062Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 54nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 40V
- Turn-Off Delay Time :
- 40 ns
- Operating Temperature :
- -55°C~175°C TJ
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Datasheets
- STU90N4F3

N-Channel Tube 6.5m Ω @ 40A, 10V ±20V 2200pF @ 25V 54nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
STU90N4F3 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 400 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2200pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 80A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 40V, and this device has a drainage-to-source breakdown voltage of 40VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 40 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
STU90N4F3 Features
the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 40 ns
STU90N4F3 Applications
There are a lot of STMicroelectronics
STU90N4F3 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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