STU95N4F3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

-5.4Ohm

JESD-30 Code :

R-PSIP-T3

Power Dissipation :

110W

Number of Terminations :

3

Power Dissipation-Max :

110W Tc

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 40A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Case Connection :

DRAIN

Element Configuration :

Single

Qualification Status :

Not Qualified

Turn-Off Delay Time :

40 ns

Base Part Number :

STU95

Gate Charge (Qg) (Max) @ Vgs :

54nC @ 10V

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

15 ns

Drain to Source Breakdown Voltage :

40V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

400 mJ

Rise Time :

50ns

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn) - annealed

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

Continuous Drain Current (ID) :

80A

FET Type :

N-Channel

Reach Compliance Code :

not_compliant

Transistor Element Material :

SILICON

Series :

STripFET™

Mounting Type :

Through Hole

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

2200pF @ 25V

JESD-609 Code :

e3

Number of Elements :

1

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

320A

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Gate to Source Voltage (Vgs) :

20V