STU9HN65M2

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Mfr.Part #
STU9HN65M2
Manufacturer
STMicroelectronics
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
MOSFET N-CH 650V 5.5A IPAK
Stock
2,452
In Stock :
2,452

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Drain to Source Voltage (Vdss) :
650V
Power Dissipation-Max :
60W Tc
FET Type :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Continuous Drain Current (ID) :
5.5A
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
325pF @ 100V
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Vgs(th) (Max) @ Id :
4V @ 250µA
ECCN Code :
EAR99
Factory Lead Time :
26 Weeks
Series :
MDmesh™ M2
Mount :
Through Hole
RoHS Status :
ROHS3 Compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Type :
Through Hole
Operating Temperature :
150°C TJ
Base Part Number :
STU9H
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Packaging :
Tube
Rds On (Max) @ Id, Vgs :
820m Ω @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs :
11.5nC @ 10V
Current - Continuous Drain (Id) @ 25°C :
5.5A Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
STU9HN65M2
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STU9HN65M2 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type:Through Hole, Operating Temperature:150°C TJ, Base Part Number:STU9H, STU9HN65M2 pinout, STU9HN65M2 datasheet PDF, STU9HN65M2 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STU9HN65M2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STU9HN65M2


N-Channel Tube 820m Ω @ 2.5A, 10V ±25V 325pF @ 100V 11.5nC @ 10V 650V TO-251-3 Short Leads, IPak, TO-251AA

STU9HN65M2 Description


STU9HN65M2 emerges as a member of N-channel power MOSFETs developed by STMicroelectronics utilizing the advanced MDmesh M2 technology. It is able to deliver extremely low on-state resistance and superior switching performance based on its strip layout and an improved vertical structure. The resulting device STU9HN65M2 provides considerable benefits for high-efficiency converters.



STU9HN65M2 Features


  • Low gate charge

  • Extremely low on-state resistance

  • Superior switching performance

  • Embedded in the IPAK package

  • Excellent output capacitance profile



STU9HN65M2 Applications


  • Switching applications


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