STU3N80K5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Mount :

Through Hole

Avalanche Energy Rating (Eas) :

65 mJ

Rds On (Max) @ Id, Vgs :

3.5 Ω @ 1A, 10V

Length :

6.6mm

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

17 Weeks

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

9.5nC @ 10V

Mounting Type :

Through Hole

Turn-Off Delay Time :

20.5 ns

Fall Time (Typ) :

25 ns

Turn On Delay Time :

8.5 ns

Operating Mode :

ENHANCEMENT MODE

Weight :

3.949996g

Number of Terminations :

3

Number of Pins :

3

Lead Free :

Lead Free

Continuous Drain Current (ID) :

2.5A

Input Capacitance (Ciss) (Max) @ Vds :

130pF @ 100V

DS Breakdown Voltage-Min :

800V

Vgs(th) (Max) @ Id :

5V @ 100µA

Rise Time :

7.5ns

Case Connection :

DRAIN

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Current - Continuous Drain (Id) @ 25°C :

2.5A Tc

Width :

2.4mm

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Number of Channels :

1

Transistor Element Material :

SILICON

Power Dissipation-Max :

60W Tc

Drain to Source Voltage (Vdss) :

800V

Element Configuration :

Single

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Height :

6.2mm

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

SuperMESH5™

Gate to Source Voltage (Vgs) :

30V

Base Part Number :

STU3N