STU3N45K3
- Mfr.Part #
- STU3N45K3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 450V 1.8A IPAK
- Stock
- 4,012
- In Stock :
- 4,012
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Vgs (Max) :
- ±30V
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Input Capacitance (Ciss) (Max) @ Vds :
- 150pF @ 25V
- Packaging :
- Tube
- Base Part Number :
- STU3N
- Max Operating Temperature :
- 150°C
- Pulsed Drain Current-Max (IDM) :
- 7.2A
- Power Dissipation-Max :
- 27W Tc
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Power Dissipation :
- 27W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 1.8A
- Factory Lead Time :
- 12 Weeks
- Rds On (Max) @ Id, Vgs :
- 3.8 Ω @ 500mA, 10V
- Width :
- 2.4mm
- Mount :
- Through Hole
- Drain to Source Breakdown Voltage :
- 450V
- ECCN Code :
- EAR99
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Current - Continuous Drain (Id) @ 25°C :
- 1.8A Tc
- Length :
- 6.6mm
- Element Configuration :
- Single
- Threshold Voltage :
- 3.75V
- Gate to Source Voltage (Vgs) :
- 30V
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Series :
- SuperMESH3™
- Gate Charge (Qg) (Max) @ Vgs :
- 6nC @ 10V
- Min Operating Temperature :
- -55°C
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Height :
- 6.9mm
- FET Type :
- N-Channel
- Datasheets
- STU3N45K3

N-Channel Tube 3.8 Ω @ 500mA, 10V ±30V 150pF @ 25V 6nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
STU3N45K3 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 150pF @ 25V.This device has a continuous drain current (ID) of [1.8A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=450V, the drain-source breakdown voltage is 450V.A maximum pulsed drain current of 7.2A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 3.75V.Its overall power consumption can be reduced by using drive voltage (10V).
STU3N45K3 Features
a continuous drain current (ID) of 1.8A
a drain-to-source breakdown voltage of 450V voltage
based on its rated peak drain current 7.2A.
a threshold voltage of 3.75V
STU3N45K3 Applications
There are a lot of STMicroelectronics
STU3N45K3 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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