STU3N62K3
- Mfr.Part #
- STU3N62K3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 620V 2.7A IPAK
- Stock
- 13,675
- In Stock :
- 13,675
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Threshold Voltage :
- 3.75V
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Rds On (Max) @ Id, Vgs :
- 2.5 Ω @ 1.4A, 10V
- Base Part Number :
- STU3N
- Width :
- 2.4mm
- Peak Reflow Temperature (Cel) :
- 260
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Radiation Hardening :
- No
- Height :
- 6.9mm
- Length :
- 6.6mm
- Series :
- SuperMESH3™
- Operating Temperature :
- 150°C TJ
- Continuous Drain Current (ID) :
- 2.7A
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation :
- 45W
- Mount :
- Through Hole
- Number of Pins :
- 3
- Vgs (Max) :
- ±30V
- Rise Time :
- 6.8ns
- Mounting Type :
- Through Hole
- FET Type :
- N-Channel
- JESD-609 Code :
- e3
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 22 ns
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 15.6 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 385pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 2.7A Tc
- Power Dissipation-Max :
- 45W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Turn On Delay Time :
- 9 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 620V
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 12 Weeks
- Pin Count :
- 3
- Datasheets
- STU3N62K3

N-Channel Tube 2.5 Ω @ 1.4A, 10V ±30V 385pF @ 25V 13nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
STU3N62K3 Overview
A device's maximal input capacitance is 385pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 2.7A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 620V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 22 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3.75V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).
STU3N62K3 Features
a continuous drain current (ID) of 2.7A
a drain-to-source breakdown voltage of 620V voltage
the turn-off delay time is 22 ns
a threshold voltage of 3.75V
STU3N62K3 Applications
There are a lot of STMicroelectronics
STU3N62K3 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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