STU3LN62K3
- Mfr.Part #
- STU3LN62K3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 620V 2.5A IPAK
- Stock
- 10,534
- In Stock :
- 10,534
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Additional Feature :
- ULTRA-LOW RESISTANCE
- Number of Pins :
- 3
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Threshold Voltage :
- 3.75V
- Power Dissipation :
- 45W
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 620V
- Pin Count :
- 3
- Number of Terminations :
- 3
- Base Part Number :
- STU3L
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Resistance :
- 3Ohm
- Avalanche Energy Rating (Eas) :
- 90 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- Radiation Hardening :
- No
- Mount :
- Through Hole
- Fall Time (Typ) :
- 27 ns
- Power Dissipation-Max :
- 45W Tc
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- SuperMESH3™
- Rise Time :
- 7ns
- Length :
- 6.6mm
- Operating Temperature :
- 150°C TJ
- Rds On (Max) @ Id, Vgs :
- 3 Ω @ 1.25A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 30 ns
- Lifecycle Status :
- NRND (Last Updated: 7 months ago)
- Input Capacitance (Ciss) (Max) @ Vds :
- 386pF @ 50V
- Vgs (Max) :
- ±30V
- FET Type :
- N-Channel
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 2.5A Tc
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 2.5A
- Height :
- 6.9mm
- Width :
- 2.4mm
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Turn On Delay Time :
- 9 ns
- Datasheets
- STU3LN62K3

N-Channel Tube 3 Ω @ 1.25A, 10V ±30V 386pF @ 50V 17nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
STU3LN62K3 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 90 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 386pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 2.5A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 620V, and this device has a drainage-to-source breakdown voltage of 620VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 30 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.In this case, the threshold voltage of the transistor is 3.75V, which means that it will not activate any of its functions when its threshold voltage reaches 3.75V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
STU3LN62K3 Features
the avalanche energy rating (Eas) is 90 mJ
a continuous drain current (ID) of 2.5A
a drain-to-source breakdown voltage of 620V voltage
the turn-off delay time is 30 ns
a threshold voltage of 3.75V
STU3LN62K3 Applications
There are a lot of STMicroelectronics
STU3LN62K3 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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