STS4DNF30L

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

2 N-Channel (Dual)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Series :

STripFET™

Drain Current-Max (Abs) (ID) :

4A

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Rise Time :

100ns

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

1V @ 250μA

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Max Power Dissipation :

2W

Continuous Drain Current (ID) :

4A

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 25V

Pin Count :

8

Fall Time (Typ) :

22 ns

Number of Pins :

8

Number of Terminations :

8

Pbfree Code :

yes

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

30V

Voltage - Rated DC :

30V

Transistor Application :

SWITCHING

Number of Elements :

2

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Turn On Delay Time :

11 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

16V

Power Dissipation :

2W

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

16A

Current Rating :

4A

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

FET Feature :

Logic Level Gate

JESD-609 Code :

e4

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 10V

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

50m Ω @ 2A, 10V

Base Part Number :

STS4D

Turn-Off Delay Time :

25 ns

Resistance :

50mOhm