STS4DNFS30L

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e4

Configuration :

SINGLE WITH BUILT-IN DIODE

Base Part Number :

STS4D

Gate to Source Voltage (Vgs) :

16V

Mount :

Surface Mount

Terminal Form :

Gull wing

Power Dissipation :

2W

Vgs (Max) :

±16V

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Vgs(th) (Max) @ Id :

1V @ 250μA

Rds On (Max) @ Id, Vgs :

55m Ω @ 2A, 10V

FET Type :

N-Channel

Turn-Off Delay Time :

25 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

4A

Height :

6.35mm

FET Feature :

Schottky Diode (Isolated)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Turn On Delay Time :

11 ns

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 5V

Pin Count :

8

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Threshold Voltage :

1V

Lead Free :

Lead Free

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Resistance :

56mOhm

Rise Time :

100ns

Width :

12.7mm

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

30V

Continuous Drain Current (ID) :

4A

Length :

6.35mm

Current Rating :

4A

Voltage - Rated DC :

30V

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 25V

Power Dissipation-Max :

2W Tc

Series :

STripFET™

Number of Terminations :

8

Fall Time (Typ) :

22 ns

Weight :

4.535924g