STS4DNFS30

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

13A

Qualification Status :

Not Qualified

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

8

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Power Dissipation-Max :

2W Tc

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Series :

STripFET™

Gate Charge (Qg) (Max) @ Vgs :

4.7nC @ 5V

JESD-609 Code :

e4

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Turn-Off Delay Time :

15 ns

Terminal Position :

Dual

Base Part Number :

STS4D

Pin Count :

8

Vgs(th) (Max) @ Id :

1V @ 250μA

ECCN Code :

EAR99

Number of Elements :

1

Rise Time :

17ns

RoHS Status :

ROHS3 Compliant

FET Feature :

Schottky Diode (Isolated)

Number of Pins :

8

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Breakdown Voltage :

30V

Terminal Finish :

NICKEL PALLADIUM GOLD

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Rds On (Max) @ Id, Vgs :

55m Ω @ 2A, 10V

Power Dissipation :

2W

Fall Time (Typ) :

6 ns

Continuous Drain Current (ID) :

4.5A

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 25V