STP8NS25FP
- Mfr.Part #
- STP8NS25FP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 8A TO220FP
- Stock
- 37,013
- In Stock :
- 37,013
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Case Connection :
- Isolated
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Finish :
- Matte Tin (Sn)
- Power Dissipation :
- 30W
- Mounting Type :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 51.8nC @ 10V
- Package / Case :
- TO-220-3 Full Pack
- Base Part Number :
- STP8N
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 450m Ω @ 4A, 10V
- Drain to Source Breakdown Voltage :
- 250V
- Continuous Drain Current (ID) :
- 8A
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain-source On Resistance-Max :
- 0.45Ohm
- Number of Terminations :
- 3
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Power Dissipation-Max :
- 30W Tc
- Pin Count :
- 3
- Drain Current-Max (Abs) (ID) :
- 8A
- Rise Time :
- 18ns
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 770pF @ 25V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Reach Compliance Code :
- not_compliant
- Qualification Status :
- Not Qualified
- Current - Continuous Drain (Id) @ 25°C :
- 8A Tc
- ECCN Code :
- EAR99
- Series :
- MESH OVERLAY™
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Fall Time (Typ) :
- 16 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- STP8NS25FP

N-Channel Tube 450m Ω @ 4A, 10V ±20V 770pF @ 25V 51.8nC @ 10V TO-220-3 Full Pack
STP8NS25FP Overview
A device's maximum input capacitance is 770pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 8A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=250V, and this device has a drain-to-source breakdown voltage of 250V voltage.Its drain current is 8A, and it is the maximum continuous current the device can conduct.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STP8NS25FP Features
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 250V voltage
STP8NS25FP Applications
There are a lot of STMicroelectronics
STP8NS25FP applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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