STP80NE06-10

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

Non-RoHS Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Tin/Lead (Sn/Pb)

Current Rating :

80A

Lead Free :

Contains Lead

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Reach Compliance Code :

not_compliant

Avalanche Energy Rating (Eas) :

250 mJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Voltage - Rated DC :

60V

Transistor Application :

SWITCHING

Power Dissipation-Max :

150W Tc

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

150W

Packaging :

Tube

Fall Time (Typ) :

75 ns

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

10000pF @ 25V

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

10m Ω @ 40A, 10V

Package / Case :

TO-220-3

Drain to Source Breakdown Voltage :

60V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Element Configuration :

Single

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

Operating Temperature :

175°C TJ

Rise Time :

150ns

Continuous Drain Current (ID) :

80A

Pin Count :

3

JESD-609 Code :

e0

Qualification Status :

Not Qualified

Base Part Number :

STP80N

JEDEC-95 Code :

TO-220AB

Pulsed Drain Current-Max (IDM) :

320A