STP80N10F7

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Drain to Source Breakdown Voltage :

100V

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

80A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

10.4mm

Element Configuration :

Single

Power Dissipation :

110W

Fall Time (Typ) :

13 ns

Lead Free :

Lead Free

Turn On Delay Time :

19 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Width :

15.75mm

Vgs (Max) :

±20V

Additional Feature :

ULTRA LOW-ON RESISTANCE

Height :

4.6mm

Case Connection :

DRAIN

Number of Terminations :

3

Transistor Application :

SWITCHING

Series :

DeepGATE™, STripFET™ VII

Power Dissipation-Max :

110W Tc

ECCN Code :

EAR99

Number of Elements :

2

Rise Time :

32ns

Rds On (Max) @ Id, Vgs :

10m Ω @ 40A, 10V

Mounting Type :

Through Hole

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

3100pF @ 50V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Base Part Number :

STP80N

Package / Case :

TO-220-3

Factory Lead Time :

13 Weeks

Number of Channels :

1

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Mount :

Through Hole

Weight :

329.988449mg

Turn-Off Delay Time :

36 ns

Packaging :

Tube

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V