STP80N70F4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

5600pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

85A Tc

Surface Mount :

No

Series :

DeepGATE™, STripFET™

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Terminal Position :

Single

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

68V

Package / Case :

TO-220-3

Vgs (Max) :

±20V

Power Dissipation-Max :

150W Tc

JESD-30 Code :

R-PSFM-T3

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Number of Elements :

1

Avalanche Energy Rating (Eas) :

185 mJ

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

Matte Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

340A

Moisture Sensitivity Level (MSL) :

Not Applicable

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

68V

Reach Compliance Code :

not_compliant

Drain Current-Max (Abs) (ID) :

85A

Drain-source On Resistance-Max :

0.0098Ohm

Rds On (Max) @ Id, Vgs :

9.8m Ω @ 40A, 10V

Pin Count :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Base Part Number :

STP80N