STP8NS25

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Gate Charge (Qg) (Max) @ Vgs :

51.8nC @ 10V

Package / Case :

TO-220-3

Drain-source On Resistance-Max :

0.45Ohm

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

32A

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSFM-T3

Operating Temperature :

150°C TJ

Base Part Number :

STP8N

Power Dissipation-Max :

80W Tc

Element Configuration :

Single

JEDEC-95 Code :

TO-220AB

ECCN Code :

EAR99

Reach Compliance Code :

not_compliant

Drain to Source Breakdown Voltage :

250V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

770pF @ 25V

FET Type :

N-Channel

Series :

MESH OVERLAY™

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Matte Tin (Sn)

Lead Free :

Lead Free

Voltage - Rated DC :

250V

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

80W

JESD-609 Code :

e3

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Fall Time (Typ) :

16 ns

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

8A

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

450m Ω @ 4A, 10V

Rise Time :

18ns

Current Rating :

8A

Mount :

Through Hole

Continuous Drain Current (ID) :

8A