STP8NM60ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

700m Ω @ 3.5A, 10V

Drain Current-Max (Abs) (ID) :

7A

Pin Count :

3

Gate to Source Voltage (Vgs) :

30V

JESD-30 Code :

R-PSFM-T3

Power Dissipation-Max :

70W Tc

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

600V

Package / Case :

TO-220-3

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Operating Temperature :

150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

560pF @ 50V

Rise Time :

22ns

Current - Continuous Drain (Id) @ 25°C :

7A Tc

JEDEC-95 Code :

TO-220AB

Turn-Off Delay Time :

37 ns

Continuous Drain Current (ID) :

7A

Mount :

Through Hole

Avalanche Energy Rating (Eas) :

200 mJ

Element Configuration :

Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Base Part Number :

STP8N

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

28A

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

9 ns

Fall Time (Typ) :

22 ns

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

Radiation Hardening :

No

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.7Ohm

JESD-609 Code :

e3

Power Dissipation :

70W

Operating Mode :

ENHANCEMENT MODE

Series :

FDmesh™ II

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V