STP8NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Base Part Number :

STP8N

Reach Compliance Code :

not_compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

Number of Terminations :

3

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

650m Ω @ 3.5A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-220-3

Power Dissipation :

70W

Additional Feature :

AVALANCHE RATED

Pbfree Code :

yes

Rise Time :

12ns

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Series :

MDmesh™ II

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-220AB

Drain Current-Max (Abs) (ID) :

7A

Fall Time (Typ) :

10 ns

Pulsed Drain Current-Max (IDM) :

28A

Continuous Drain Current (ID) :

7A

Drain to Source Breakdown Voltage :

600V

Mounting Type :

Through Hole

Mount :

Through Hole

Vgs (Max) :

±25V

Element Configuration :

Single

Resistance :

650mOhm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Matte Tin (Sn)

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

200 mJ

Turn-Off Delay Time :

40 ns

Pin Count :

3

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Power Dissipation-Max :

70W Tc

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSFM-T3

Input Capacitance (Ciss) (Max) @ Vds :

560pF @ 50V

Packaging :

Tube

Gate to Source Voltage (Vgs) :

25V