STP8NM60FP

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

8A

Turn-Off Delay Time :

23 ns

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

8A

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

1 Ω @ 2.5A, 10V

FET Type :

N-Channel

ECCN Code :

EAR99

Continuous Drain Current (ID) :

8A

Mount :

Through Hole

Series :

MDmesh™

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

Base Part Number :

STP8N

Resistance :

1Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3 Full Pack

Number of Elements :

1

Case Connection :

Isolated

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Pin Count :

3

Vgs (Max) :

±30V

Pbfree Code :

yes

Mounting Type :

Through Hole

Turn On Delay Time :

14 ns

Drain to Source Breakdown Voltage :

600V

Terminal Finish :

Matte Tin (Sn) - annealed

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 25V

Rise Time :

10ns

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Avalanche Energy Rating (Eas) :

200 mJ

Power Dissipation :

30W

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

JESD-609 Code :

e3

Fall Time (Typ) :

10 ns

Transistor Application :

SWITCHING

Voltage - Rated DC :

650V

Element Configuration :

Single

Power Dissipation-Max :

30W Tc