STP8NM60D

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Fall Time (Typ) :

8 ns

Pin Count :

3

Rds On (Max) @ Id, Vgs :

1 Ω @ 2.5A, 10V

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Element Configuration :

Single

Power Dissipation :

100W

Series :

MDmesh™

Input Capacitance (Ciss) (Max) @ Vds :

380pF @ 25V

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSFM-T3

Packaging :

Tube

Drain to Source Breakdown Voltage :

600V

Vgs(th) (Max) @ Id :

5V @ 250μA

Base Part Number :

STP8N

Continuous Drain Current (ID) :

8A

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

1Ohm

JESD-609 Code :

e3

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

200 mJ

Package / Case :

TO-220-3

JEDEC-95 Code :

TO-220AB

Mount :

Through Hole

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Rise Time :

10ns

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±30V

Power Dissipation-Max :

100W Tc

Pulsed Drain Current-Max (IDM) :

32A

Gate to Source Voltage (Vgs) :

30V

Operating Temperature :

-65°C~150°C TJ

Additional Feature :

AVALANCHE RATED

Turn-Off Delay Time :

26 ns

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

8A