STP8NM50FP
- Mfr.Part #
- STP8NM50FP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 550V 8A TO220FP
- Stock
- 18,457
- In Stock :
- 18,457
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Drain Current-Max (Abs) (ID) :
- 8A
- JESD-609 Code :
- e3
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Vgs (Max) :
- ±30V
- Current - Continuous Drain (Id) @ 25°C :
- 8A Tc
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 30V
- Reach Compliance Code :
- not_compliant
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- MDmesh™
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 415pF @ 25V
- Case Connection :
- Isolated
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Base Part Number :
- STP8N
- Fall Time (Typ) :
- 6 ns
- Rise Time :
- 8ns
- Power Dissipation-Max :
- 25W Tc
- Pin Count :
- 3
- Voltage - Rated DC :
- 550V
- Drain-source On Resistance-Max :
- 0.8Ohm
- Mounting Type :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 800m Ω @ 2.5A, 10V
- Package / Case :
- TO-220-3 Full Pack
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Operating Temperature :
- -65°C~150°C TJ
- Qualification Status :
- Not Qualified
- Current Rating :
- 8A
- Power Dissipation :
- 100W
- Continuous Drain Current (ID) :
- 8A
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 500V
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-220AB
- Datasheets
- STP8NM50FP

N-Channel Tube 800m Ω @ 2.5A, 10V ±30V 415pF @ 25V 13nC @ 10V TO-220-3 Full Pack
STP8NM50FP Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 200 mJ.The maximum input capacitance of this device is 415pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 8A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.As shown in the table below, the drain current of this device is 8A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
STP8NM50FP Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 500V voltage
STP8NM50FP Applications
There are a lot of STMicroelectronics
STP8NM50FP applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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