STP8NM50FP

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Mfr.Part #
STP8NM50FP
Manufacturer
STMicroelectronics
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 550V 8A TO220FP
Stock
18,457
In Stock :
18,457

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
ECCN Code :
EAR99
Drain Current-Max (Abs) (ID) :
8A
JESD-609 Code :
e3
FET Type :
N-Channel
Number of Elements :
1
Vgs (Max) :
±30V
Current - Continuous Drain (Id) @ 25°C :
8A Tc
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
Gate to Source Voltage (Vgs) :
30V
Reach Compliance Code :
not_compliant
Avalanche Energy Rating (Eas) :
200 mJ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Series :
MDmesh™
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mount :
Through Hole
Number of Terminations :
3
Packaging :
Tube
Input Capacitance (Ciss) (Max) @ Vds :
415pF @ 25V
Case Connection :
Isolated
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Pins :
3
Lead Free :
Lead Free
Vgs(th) (Max) @ Id :
5V @ 250μA
Base Part Number :
STP8N
Fall Time (Typ) :
6 ns
Rise Time :
8ns
Power Dissipation-Max :
25W Tc
Pin Count :
3
Voltage - Rated DC :
550V
Drain-source On Resistance-Max :
0.8Ohm
Mounting Type :
Through Hole
Rds On (Max) @ Id, Vgs :
800m Ω @ 2.5A, 10V
Package / Case :
TO-220-3 Full Pack
Operating Mode :
ENHANCEMENT MODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pbfree Code :
yes
Operating Temperature :
-65°C~150°C TJ
Qualification Status :
Not Qualified
Current Rating :
8A
Power Dissipation :
100W
Continuous Drain Current (ID) :
8A
Element Configuration :
Single
Drain to Source Breakdown Voltage :
500V
Terminal Finish :
Matte Tin (Sn)
Transistor Application :
SWITCHING
JEDEC-95 Code :
TO-220AB
Datasheets
STP8NM50FP
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STP8NM50FP from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:3, Base Part Number:STP8N, Mounting Type:Through Hole, Package / Case:TO-220-3 Full Pack, Operating Temperature:-65°C~150°C TJ, STP8NM50FP pinout, STP8NM50FP datasheet PDF, STP8NM50FP amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STP8NM50FP ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STP8NM50FP


N-Channel Tube 800m Ω @ 2.5A, 10V ±30V 415pF @ 25V 13nC @ 10V TO-220-3 Full Pack

STP8NM50FP Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 200 mJ.The maximum input capacitance of this device is 415pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 8A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.As shown in the table below, the drain current of this device is 8A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.

STP8NM50FP Features


the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 500V voltage


STP8NM50FP Applications


There are a lot of STMicroelectronics
STP8NM50FP applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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