STP8NK85Z

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

6.7A Tc

Terminal Finish :

Tin

FET Type :

N-Channel

Series :

SuperMESH™

Transistor Application :

SWITCHING

Power Dissipation :

150W

Additional Feature :

AVALANCHE RATED

JESD-30 Code :

R-PSFM-T3

Avalanche Energy Rating (Eas) :

350 mJ

Element Configuration :

Single

Turn-Off Delay Time :

58 ns

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 3.35A, 10V

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Gate to Source Voltage (Vgs) :

30V

Case Connection :

Isolated

Fall Time (Typ) :

18 ns

Drain to Source Breakdown Voltage :

850V

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Voltage - Rated DC :

850V

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

150W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

3

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current Rating :

6.7A

Mount :

Through Hole

Package / Case :

TO-220-3

Base Part Number :

STP8N

JEDEC-95 Code :

TO-220AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

19ns

Continuous Drain Current (ID) :

6.7A

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

1870pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Number of Elements :

1